Cluster

I – Materials, technology and devices

II – Device models and control (Power IC):

III – Bi-directional devices and topologies:

Project name	Institution	Researcher	Cluster
Electronic transport of polarization-induced, two-dimensional electron gases with extremely high sheet carrier density for ScAlN/GaN-based power devices (ScNius)	Albert-Ludwigs-Universität Freiburg, Institut für Nachhaltige Technische Systeme – INATECH TU Bergakademie Freiberg, Institut für Angewandte Physik	Oliver Ambacher, Ali Yassine Johannes Heitmann, Peter Fischer, Alexander Schmid	I I
Planar and Vertical Junctions for innovative GaN-Based High-Power Devices	Otto-von-Guericke-Universität Magdeburg, Institut für Physik (IfP) RWTH Aachen, Lehr- und Forschungsgebiet Technologie der Verbindungshalbleiter	Jürgen Christen, Holger Eisele, Gordon Schmidt, Konstantin Wein Andrei Vescan, Qi Shu	I I
Transition metal-nitride-AlGaN layers for electronic applications by sputtering epitaxy	Otto-von-Guericke-Universität Magdeburg, Abt. Halbleiterepitaxie Otto-von-Guericke-Universität Magdeburg, Abt. Materialphysik	Armin Dadgar, Christopher Lüttich Martin Feneberg, Jona Grümbel	I I
High Frequency Switching Power Converters based on AlN-based Power Transistors	TU Berlin, Chair of Power Electronics Ferdinand Braun Institut, GaN Power Electronic Devices Lab Ferdinand Braun Institut, Transmitter & Receiver	Sibylle Dieckerhoff, Viktoria Schwarzott Oliver Hilt, Houssam Halhoul Andreas Wentzel, Thomas Hoffmann	II+III I+III II
Modelling and characterization of GaN-HEMT devices with respect to effects of charge carrier trapping	KIT, Leistungselektronische Systeme KIT, Institut für Hochleistungsimpuls- und Mikrowellentechnik	Marc Hiller, Philipp Swoboda Martin Sack, Ivan Vorotiahin	II II
Conformal 3D Ceramic-Based Intelligent GaN Power Systems-in-Package (3D-CeraGaN)	Universität Stuttgart, Institut für Robuste Leistungshalbleitersysteme Universität Stuttgart, Institut für Mikrointegration	Ingmar Kallfass, Manuel Rueß André Zimmermann, Peter Mack	II I
Adaptive GaN gate driver with inductive feed-forward for highest efficiency (AGaNDrive)	Universität Duisburg-Essen, Elektronische Bauelemente und Schaltungen TU Dortmund, Lehrstuhl Energiewandlung	Anton Grabmaier, Rainer Kokozinski, Markus Diekmann Martin Pfost, Céline Lawniczak	II II
Monolithically Integrated Bidirectional GaN-Based Switch enabling Self-Healing Multi-Winding DC/DC Converters	CAU Kiel, Chair of Power Electronics RWTH Aachen, Lehr- und Forschungsgebiet Technologie der Verbindungshalbleiter	Marco Liserre, Thiago Pereira Andrei Vescan, Jasmin Ehrler	III I+III
Modelling and Assessment of Threshold Voltage Instabilities in p-gate GaN HEMTs	TU Dortmund, Lehrstuhl Energiewandlung	Martin Pfost, Thorsten Oeder	II
GaN-Enabled Three-Phase PFC-Rectifier Family in CCM-Boost Mode Employing Only Two HF-Switches and Inductors for Low Common Mode and Simplified Power Architectures	Universität Paderborn, Leistungselektronik und Elektrische Antriebstechnik	Frank Schafmeister, Saurav Das	III
Aluminum Nitride for vertical Power Electronics	TU Braunschweig, Institut für Halbleitertechnik Friedrich-Alexander-Universität, Lehrstuhl für Optoelektronik	Andreas Waag, Klaas Strempel Bernd Witzigmann, Samuel Faber	I I

Funded Projects in GaNius II

Cluster

I – Characterization and Long-Term Stability

II – Device Applications including Bidirectional Switches

III – Integration

Project name	Institution	Researchers	Cluster
Determining the Temperature of GaN based power semiconductors based on Temperature Sensitive Paramaters (TSEP)	Universität Bayreuth	Mark Bakran and Andreas Bäumler	I
ReToGaN – Investigations of Reliability, Parameter Stability and Topologies for GaN-Based Power Electronics	Technische Universität Chemnitz	Thomas Basler and Gengqi Li	I
ReToGaN – Investigations of Reliability, Parameter Stability and Topologies for GaN-Based Power Electronics	Universität Kassel	Jens Friebe and Yasser Yousefi Zandabad	I
Modelling and Characterization of GaN-HEMTs under Stress Conditions in Power Electronic Systems	Technische Universität Berlin	Sibylle Dieckerhoff	I
Modelling and Characterization of GaN-HEMTs under Stress Conditions in Power Electronic Systems	Technische Universität Dortmund	Martin Pfost	I
High Frequency Switching Power Converters based on AlN-based Power Transistors	Technische Universität Berlin	Sibylle Dieckerhoff and Jonas Schlindwein	II, III
High Frequency Switching Power Converters based on AlN-based Power Transistors	Ferdinand-Braun-Institut Berlin	Oliver Hilt	II, III
High Frequency Switching Power Converters based on AlN-based Power Transistors	Ferdinand-Braun-Institut Berlin	Andreas Wentzel	II, III
GaN-HEMT Driver utilizing Alternative Control and Feed-Forward Techniques (GaNdalf)	Universität Duisburg Essen	Anton Grabmeier	II, III
GaN-HEMT Driver utilizing Alternative Control and Feed-Forward Techniques (GaNdalf)	Technische Universität Dortmund	Martin Pfost	II, III
Characterization and Application of GaN-HEMTs at Cryogenic Temperatures	Karlsruher Institut für Technologie	Marc Hiller	I
Highly-Efficient, Isolated Multi-MHz GaN-based DC-DC Converters with Active Diode Rectification	Universität Stuttgart	Ingmar Kallfass and Manuel Rueß	II
Highly-Efficient, Isolated Multi-MHz GaN-based DC-DC Converters with Active Diode Rectification	Friedrich-Alexander-Universität Erlangen-Nürnberg	Martin März and Nikolai Weitz	II
Exploiting GaN Devices for Drive Inverters and Drive Inverters for GaN Devices (DriveForGaN)	Otto-von-Guericke-Universität Magdeburg	Andreas Lindemann and Tainyu Li	I, II ,III
Exploiting GaN Devices for Drive Inverters and Drive Inverters for GaN Devices (DriveForGaN)	Technische Universität Braunschweig	Regine Mallwitz and Minjia Chen	I, II ,III
Performance Evaluation of Soft-and Hard-Switched Inverters Based on Monolithically-Integrated Bidirectional GaN Devices	Christian-Albrechts-Universität zu Kiel	Marco Liserre and Reza Barzgarkhoo	III
Bidirectional-GaN-based Soft-switched Current Source Converters	Technische Universität München	Marcelo Lobo Heldwein and Christos Leontaris	III
Toward chip-scale Off-line Power supplies in GaN: Advancing monolithic GaN analog and mixed signal circuit design for high-efficiency and highly integrated power-factor correction (PFC) converters	Leibniz Universität Hannover	Bernhard Wicht and Niklas Deneke	II