Funded Projects in GaNius I

Cluster


I – Materials, technology and devices


II – Device models and control (Power IC):


III – Bi-directional devices and topologies:

Project nameInstitutionResearcherCluster
Electronic transport of polarization-induced, two-dimensional electron gases with extremely high sheet carrier density for ScAlN/GaN-based power devices (ScNius)Albert-Ludwigs-Universität Freiburg, Institut für Nachhaltige Technische Systeme – INATECH
TU Bergakademie Freiberg, Institut für Angewandte Physik
Oliver Ambacher, Ali Yassine
Johannes Heitmann, Peter Fischer, Alexander Schmid
I
I
Planar and Vertical Junctions for innovative GaN-Based High-Power DevicesOtto-von-Guericke-Universität Magdeburg, Institut für Physik (IfP)
RWTH Aachen, Lehr- und Forschungsgebiet Technologie der Verbindungshalbleiter
Jürgen Christen, Holger Eisele, Gordon Schmidt, Konstantin Wein
Andrei Vescan, Qi Shu
I
I
Transition metal-nitride-AlGaN layers for electronic applications by sputtering epitaxyOtto-von-Guericke-Universität Magdeburg, Abt. Halbleiterepitaxie
Otto-von-Guericke-Universität Magdeburg, Abt. Materialphysik
Armin Dadgar, Christopher Lüttich
Martin Feneberg, Jona Grümbel
I
I
High Frequency Switching Power Converters based on AlN-based Power TransistorsTU Berlin, Chair of Power Electronics
Ferdinand Braun Institut, GaN Power Electronic Devices Lab
Ferdinand Braun Institut, Transmitter & Receiver
Sibylle Dieckerhoff, Viktoria Schwarzott
Oliver Hilt, Houssam Halhoul
Andreas Wentzel, Thomas Hoffmann
II+III
I+III
II
Modelling and characterization of GaN-HEMT devices with respect to effects of charge carrier trappingKIT, Leistungselektronische Systeme
KIT, Institut für Hochleistungsimpuls- und Mikrowellentechnik
Marc Hiller, Philipp Swoboda
Martin Sack, Ivan Vorotiahin
II
II
Conformal 3D Ceramic-Based Intelligent GaN Power Systems-in-Package (3D-CeraGaN)Universität Stuttgart, Institut für Robuste Leistungs­halbleiter­systeme
Universität Stuttgart, Institut für Mikrointegration
Ingmar Kallfass, Manuel Rueß
André Zimmermann, Peter Mack
II
I
Adaptive GaN gate driver with inductive feed-forward for highest efficiency (AGaNDrive)
Universität Duisburg-Essen, Elektronische Bauelemente und Schaltungen
TU Dortmund, Lehrstuhl Energiewandlung
Anton Grabmaier, Rainer Kokozinski, Markus Diekmann
Martin Pfost, Céline Lawniczak
II
II
Monolithically Integrated Bidirectional GaN-Based Switch enabling Self-Healing Multi-Winding DC/DC ConvertersCAU Kiel, Chair of Power Electronics
RWTH Aachen, Lehr- und Forschungsgebiet Technologie der Verbindungshalbleiter
Marco Liserre, Thiago Pereira
Andrei Vescan, Jasmin Ehrler
III
I+III
Modelling and Assessment of Threshold Voltage Instabilities in p-gate GaN HEMTsTU Dortmund, Lehrstuhl EnergiewandlungMartin Pfost, Thorsten OederII
GaN-Enabled Three-Phase PFC-Rectifier Family in CCM-Boost Mode Employing Only Two HF-Switches and Inductors for Low Common Mode and Simplified Power ArchitecturesUniversität Paderborn, Leistungselektronik und Elektrische AntriebstechnikFrank Schafmeister, Saurav DasIII
Aluminum Nitride for vertical Power ElectronicsTU Braunschweig, Institut für Halbleitertechnik
Friedrich-Alexander-Universität, Lehrstuhl für Optoelektronik
Andreas Waag, Klaas Strempel
Bernd Witzigmann, Samuel Faber
I
I

Funded Projects in GaNius II

Cluster

I – Characterization and Long-Term Stability

II – Device Applications including Bidirectional Switches

III – Integration

Project nameInstitutionResearchersCluster
Determining the Temperature of GaN based power semiconductors based on Temperature Sensitive Paramaters (TSEP)Universität BayreuthMark Bakran and Andreas BäumlerI
ReToGaN – Investigations of Reliability, Parameter Stability and Topologies for GaN-Based Power ElectronicsTechnische Universität ChemnitzThomas Basler and Gengqi LiI
ReToGaN – Investigations of Reliability, Parameter Stability and Topologies for GaN-Based Power ElectronicsUniversität KasselJens Friebe and Yasser Yousefi ZandabadI
Modelling and Characterization of GaN-HEMTs under Stress Conditions in Power Electronic SystemsTechnische Universität BerlinSibylle DieckerhoffI
Modelling and Characterization of GaN-HEMTs under Stress Conditions in Power Electronic SystemsTechnische Universität Dortmund Martin Pfost
I
High Frequency Switching Power Converters based on AlN-based Power TransistorsTechnische Universität BerlinSibylle Dieckerhoff and Jonas SchlindweinII, III
High Frequency Switching Power Converters based on AlN-based Power TransistorsFerdinand-Braun-Institut BerlinOliver HiltII, III
High Frequency Switching Power Converters based on AlN-based Power TransistorsFerdinand-Braun-Institut BerlinAndreas WentzelII, III
GaN-HEMT Driver utilizing Alternative Control and Feed-Forward Techniques (GaNdalf)Universität Duisburg EssenAnton Grabmeier
II, III
GaN-HEMT Driver utilizing Alternative Control and Feed-Forward Techniques (GaNdalf)Technische Universität Dortmund
Martin PfostII, III
Characterization and Application of GaN-HEMTs at Cryogenic TemperaturesKarlsruher Institut für TechnologieMarc HillerI
Highly-Efficient, Isolated Multi-MHz GaN-based DC-DC Converters with Active Diode RectificationUniversität StuttgartIngmar Kallfass and Manuel RueßII
Highly-Efficient, Isolated Multi-MHz GaN-based DC-DC Converters with Active Diode RectificationFriedrich-Alexander-Universität Erlangen-NürnbergMartin März and Nikolai WeitzII
Exploiting GaN Devices for Drive Inverters and Drive Inverters for GaN Devices (DriveForGaN)Otto-von-Guericke-Universität MagdeburgAndreas Lindemann and Tainyu LiI, II ,III
Exploiting GaN Devices for Drive Inverters and Drive Inverters for GaN Devices (DriveForGaN)Technische Universität BraunschweigRegine Mallwitz and Minjia ChenI, II ,III
Performance Evaluation of Soft-and Hard-Switched Inverters Based on Monolithically-Integrated Bidirectional GaN Devices

Christian-Albrechts-Universität zu Kiel
Marco Liserre and Reza Barzgarkhoo
III
Bidirectional-GaN-based Soft-switched Current Source ConvertersTechnische Universität München
Marcelo Lobo Heldwein and Christos Leontaris
III
Toward chip-scale Off-line Power supplies in GaN: Advancing monolithic GaN analog and mixed signal circuit design for high-efficiency and highly integrated power-factor correction (PFC) convertersLeibniz Universität Hannover
Bernhard Wicht and Niklas Deneke
II