Cluster
I – Materials, technology and devices
II – Device models and control (Power IC):
III – Bi-directional devices and topologies:
Funded Projects in GaNius II
Cluster
I – Characterization and Long-Term Stability
II – Device Applications including Bidirectional Switches
III – Integration
Project name | Institution | Researchers | Cluster |
Determining the Temperature of GaN based power semiconductors based on Temperature Sensitive Paramaters (TSEP) | Universität Bayreuth | Mark Bakran and Andreas Bäumler | I |
ReToGaN – Investigations of Reliability, Parameter Stability and Topologies for GaN-Based Power Electronics | Technische Universität Chemnitz | Thomas Basler and Gengqi Li | I |
ReToGaN – Investigations of Reliability, Parameter Stability and Topologies for GaN-Based Power Electronics | Universität Kassel | Jens Friebe and Yasser Yousefi Zandabad | I |
Modelling and Characterization of GaN-HEMTs under Stress Conditions in Power Electronic Systems | Technische Universität Berlin | Sibylle Dieckerhoff | I |
Modelling and Characterization of GaN-HEMTs under Stress Conditions in Power Electronic Systems | Technische Universität Dortmund | Martin Pfost | I |
High Frequency Switching Power Converters based on AlN-based Power Transistors | Technische Universität Berlin | Sibylle Dieckerhoff and Jonas Schlindwein | II, III |
High Frequency Switching Power Converters based on AlN-based Power Transistors | Ferdinand-Braun-Institut Berlin | Oliver Hilt | II, III |
High Frequency Switching Power Converters based on AlN-based Power Transistors | Ferdinand-Braun-Institut Berlin | Andreas Wentzel | II, III |
GaN-HEMT Driver utilizing Alternative Control and Feed-Forward Techniques (GaNdalf) | Universität Duisburg Essen | Anton Grabmeier | II, III |
GaN-HEMT Driver utilizing Alternative Control and Feed-Forward Techniques (GaNdalf) | Technische Universität Dortmund | Martin Pfost | II, III |
Characterization and Application of GaN-HEMTs at Cryogenic Temperatures | Karlsruher Institut für Technologie | Marc Hiller | I |
Highly-Efficient, Isolated Multi-MHz GaN-based DC-DC Converters with Active Diode Rectification | Universität Stuttgart | Ingmar Kallfass and Manuel Rueß | II |
Highly-Efficient, Isolated Multi-MHz GaN-based DC-DC Converters with Active Diode Rectification | Friedrich-Alexander-Universität Erlangen-Nürnberg | Martin März and Nikolai Weitz | II |
Exploiting GaN Devices for Drive Inverters and Drive Inverters for GaN Devices (DriveForGaN) | Otto-von-Guericke-Universität Magdeburg | Andreas Lindemann and Tainyu Li | I, II ,III |
Exploiting GaN Devices for Drive Inverters and Drive Inverters for GaN Devices (DriveForGaN) | Technische Universität Braunschweig | Regine Mallwitz and Minjia Chen | I, II ,III |
Performance Evaluation of Soft-and Hard-Switched Inverters Based on Monolithically-Integrated Bidirectional GaN Devices | Christian-Albrechts-Universität zu Kiel | Marco Liserre and Reza Barzgarkhoo | III |
Bidirectional-GaN-based Soft-switched Current Source Converters | Technische Universität München | Marcelo Lobo Heldwein and Christos Leontaris | III |
Toward chip-scale Off-line Power supplies in GaN: Advancing monolithic GaN analog and mixed signal circuit design for high-efficiency and highly integrated power-factor correction (PFC) converters | Leibniz Universität Hannover | Bernhard Wicht and Niklas Deneke | II |