Publications

GaNius Phase 1:

2025: Modeling Electron Beam Induced Current in III-Nitride Light Emitting Diodes

2025: Application-Oriented Test Setup for Measuring Dynamic Output and Transfer Characteristics of GaN-HEMTs

  • Authors: P. Swoboda, M. Fein, S. Frank, A. Liske, M. Hiller
  • Published: March 2025
  • 2025 IEEE Applied Power Electronics Conference and
  • Exposition (APEC), Atlanta, GA, USA
  • doi: 10.1109/APEC48143.2025.10977237

2025: Investigation and Reduction of Surface Damage of Etched Quasi-Vertical Gallium Nitride Schottky Diodes

2024: Improved Test Circuit for Characterization of the Dynamic On-Resistance of GaN-HEMTs over a Wide Operating Range

  • Authors: P. Swoboda, S. R. Frank, A. Liske, M. Hiller
  • Published: September 2024
  • 2024 Energy Conversion Congress & Expo Europe (ECCE Europe), Darmstadt, Germany
  • doi: 10.1109/ECCEEurope62508.2024.10751914

2024: Band gaps and phonons of quasi-bulk rocksalt ScN

2024: Optical properties of rocksalt ScN

2024: Simulation Study of Aluminum-Nitride TrenchFETs with Polarization-induced Doping

2024: Polarization-induced doping in vertical AlGaN transistors

2023: Parasitic AlxOyNz surface defects on high-temperature annealed
AlN and their role in hillock formation

2023: (Late News) Characterization of the Space-Charge Region of a GaN pn-Junction and pin-Drift-Diode Using EBIC and CL

2023: Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing

2023: Optical and structural nano- characterization of GaN-based power devices

2023: Polarization-induced doping in n-channel vertical Aluminum-Nitride transistors

2023: Polarization induced doping for carrier transport in graded III-nitride layers: a simulation study

2023: Nano-characterization of a space-charge region in a pn-diode with long drift layer: detailed cathodoluminescence and EBIC correlation

2023: A Combination of Ion Implantation and High-Temperature Annealing: Donor–Acceptor Pairs in Carbon-Implanted AlN

2022: A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN

2022: Sputtering epitaxy of transition metal nitrides and AlScN

  • Authors: Christopher Lüttich, Florian Hörich, Ralf Borgmann, Jürgen Bläsing, Anja Dempewolf, Gordon Schmidt, Peter Veit, Jürgen Christen, André Strittmatter, Armin Dadgar
  • Published: June 2022
  • https://ieeexplore.ieee.org/document/9930417

GaNius Phase 2:

2025: A 2 kW GaN-Based 100 V Half-Bridge Power Module using an optimized PCB-Ceramic Stack-Up for High Efficiency and Power Density

  • Authors: Manuel Rueß, Peter Mack, Jonas Pannasch, Mathias C. J. Weiser, Jeremy Nuzzo, Dominik Koch, Ingmar Kallfass
  • Published: December 2025
  • 10th IEEE Southern Power Electronics Conference (IEEE SPEC 2025), Johannesburg, South Afrika, 2025

2025: Dialogue Session at ECCE Europe:

  • Title: Modeling of the temperature-dependent On-State-Resistance of GaN HEMTs considering self-heating during measurement
  • By Andreas Bäumler, Mark-M. Bakran
  • Energy Conversion Congress & Expo Europe (ECCE Europe), Birmingham, UK

2025: Characterization of a High-Bandwidth SMD-Based Current Shunt for GaN HEMT

  • Authors: Tianyu Li, Minjia Chen, Andreas Lindemann, Regine Mallwitz
  • Published: September 2025
  • Energy Conversion Congress & Expo Europe (ECCE Europe), Birmingham, UK

2025: Analysis of Inverter Operation Modes of an IGBT-Based ZCS LLC Converter for a 2 kW Automotive On-Board DC-DC

  • Authors: A. Bäumler, M.-M. Bakran
  • Published: August 2025
  • Energy Conversion Congress & Expo Europe (ECCE Europe), Birmingham, UK

2025: Modeling of the temperature-dependent On-State-Resistance of GaN-HEMTs considering self-heating during measurement

  • Authors: A. Bäumler, M.-M. Bakran
  • Published: August 2025
  • Energy Conversion Congress & Expo Europe (ECCE Europe), Birmingham, UK

2025: Comparison of Compact Power Amplifier Designs for High Frequency Resonant Wireless Power Transfer Systems at 6.78 MHz using High-Q Resonators

  • Authors: M. Rueß, K. Müller, M. C. J. Weiser and I. Kallfass
  • Published: March 2025
  • 2025 IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, GA, USA
  • doi: 10.1109/APEC48143.2025.10977292

2024: Achieving Low Inductance Power Loops on Rigid-Flex Substrates for Efficient MHz Switching in GaN Half-Bridges

  • Authors: M. Rueß, D. Koch, I. Kallfass
  • Published: October 2024
  • IEEE Energy Conversion Congress and Exposition (ECCE), Phoenix, AZ, USA
  • doi: 10.1109/ECCE55643.2024.10861372

2024: Analysis of Inverter Operation Modes of an IGBT-Based ZCS LLC Converter for a 2 kW Automotive On-Board DC-DC

  • Authors: D. Urbaneck, J. Wiegard, F. Schafmeister
  • Published: October 2024
  • IEEE Energy Conversion Congress and Exposition (ECCE), Phoenix, AZ, USA
  • doi: 10.1109/ECCE55643.2024.10861372

2024: Pitfalls and their Avoidability in the Double-Pulse Test

2024: GaN half-bridges on electrical and thermal co-designed ceramic substrates

  • Authors: Manuel Rueß, Peter Mack, Dominik Koch, Aline Reck, Mathias C.J. Weiser, André Zimmermann, Ingmar Kallfass
  • Published: April 2024
  • Power Electronic Devices and Components (PEDC), Volume 11, 2025, 100091, ISSN 2772-3704
  • doi: 10.1016/j.pedc.2025.100091

2023: Multi-MHz Auto-Resonant Power Oscillator in a 650 V GaN-on-SOI Technology for Compact Wireless Power Transfer Systems