Publications

---

GaNius Phase 1:

2025: Modeling Electron Beam Induced Current in III-Nitride Light Emitting Diodes

• Authors: B. Utsch, F. Römer, S. Faber, F. Bertram, G. Schmidt, P. Veit, C. Berger, A. Dadgar, A. Strittmatter , J. Christen, and B. Witzigmann
• Published: September 2025
• https://www.researchgate.net/publication/396726119_Modelling_Electron_Beam_Induced_Current_in_III-Nitride_Light_Emitting_Diodes

2025: Investigation and Reduction of Surface Damage of Etched Quasi-Vertical Gallium Nitride Schottky Diodes

• Authors: Q. Shu, K. Zhou, A. Kirchbrücher, H. Kalisch, A. Vescan, A. Debald, M. Heuken
• Published: February 2025
• https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202400880
• doi: 10.1002/pssa.202400880

2024: Band gaps and phonons of quasi-bulk rocksalt ScN

• Authors: J. Grümbel, R. Goldhahn, M. Feneberg, Y. Oshima, A. Dubroka, M. Ramsteiner
• Published: July 2024
• https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.8.L071601

2024: Optical properties of rocksalt ScN

• Authors: Martin Feneberg, Jona Grümbel, Christopher Lüttich, Armin Dadgar, Yuichi Oshima, Adam Dubroka, Manfred Ramsteiner, Rüdiger Goldhahn
• Published: July 2024
• https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.8.L071601

2024: Simulation Study of Aluminum-Nitride TrenchFETs with Polarization-induced Doping

• Authors: S. Faber, F. Römer, B. Witzigmann
• Published: March 2024
• https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.202400045

2024: Polarization-induced doping in vertical AlGaN transistors

• Authors: B. Witzigmann, S. Faber, R. Miranti-Augustin, F. Römer, J. Hartmann, C. Margenfeld, A. Waag
• Published: March 2024
• https://www.spiedigitallibrary.org/conference-proceedings-of-spie/PC12886/PC128860L/Polarization-induced-doping-in-vertical-AlGaN-transistors/10.1117/12.3002362.short

2023: Parasitic$$ Al_xO_yN_z surface defects on high-temperature annealed
AlN and their role in hillock formation

• Authors: Lukas Peters, Tobias Meyer, Christoph Margenfeld, Hendrik Spende, Andreas Waag
• Published: September 2023
• https://doi.org/10.1063/5.0170006

2023: (Late News) Characterization of the Space-Charge Region of a GaN pn-Junction and
pin-Drift-Diode Using EBIC and CL

• Authors: H. Eisele, K. Wein, F. Bertram, G. Schmidt, J. Christen, A. Dadgar, C. Berger, A. Strittmatter, A. Debald, M. Heuken, T. Zweipfenning, H. Kalisch, A. Vescan, S. Faber and B. Witzigmann
• Published: June 2023
• https://forschung-sachsen-anhalt.de/static/gfx/publikationsbericht/u129_2023.pdf

2023: Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing

• Authors: Lukas Peters, Dmitry Sergeev, Christoph Margenfeld, Michael Müller, Andreas Waag
• Published: June 2023
• https://doi.org/10.1063/5.0152054

2023: Optical and structural nano- characterization of GaN-based power devices,

• Authors: J. Christen, G. Schmidt, F. Bertram, A. Debald, M. Heuken, T. Zweipfennig, H. Kalisch, A. Vescan, Andrei
• Published: March 2023
• https://www.spiedigitallibrary.org/conference-proceedings-of-spie/0/0000/Optical-and-structural-nano-characterization-of-GaN-based-power-devices/10.1117/12.2649840.short

2023: Polarization-induced doping in n-channel vertical Aluminum-Nitride transistors

• Authors: B. Witzigmann, S. Faber, R. Miranti-Augustin, F. Römer, J. Hartmann, C. Margenfeld, M. Garces-Schröder, A. Waag
• Published: March 2023
• https://www.spiedigitallibrary.org/conference-proceedings-of-spie/0/PC128860/Polarization-induced-doping-in-vertical-AlGaN-transistors/10.1117/12.3002362.short

2023: Polarization induced doping for carrier transport in graded III-nitride layers: a simulation study

• Authors: B. Witzigmann, F. Römer
• Published: March 2023
• https://www.researchgate.net/publication/369150042_Polarization_induced_doping_for_carrier_transport_in_graded_III-nitride_layers_a_simulation_study

2023: Nano-characterization of a space-charge region in a pn-diode with long drift layer: detailed cathodoluminescence and EBIC correlation

• Authors: K. Wein, F. Bertram, G. Schmidt, P. Veit, J. Christen, S. Faber, B. Witzigmann, M. Heuken, T. Zweipfenning, H. Kalisch, A. Vescan, A. Debald
• Published: March 2023
• https://www.spiedigitallibrary.org/conference-proceedings-of-spie/0/0000/Nano-characterization-of-a-space-charge-region-in-a-pn/10.1117/12.2646670.short

2023: A Combination of Ion Implantation and High-Temperature Annealing: Donor–Acceptor Pairs in Carbon-Implanted AlN

• Authors: Lukas Peters, Hendrik Spende, Stefan Wolter, Christoph Margenfeld, Carsten Ronning, Tobias Voss, Andreas Waag
• Published: February 2023
• https://doi.org/10.1002/pssa.202200809

2022: A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN

• Authors: Lukas Peters, Christoph Margenfeld, Jan Krügener, Carsten Ronning, Andreas Waag
• Published: September 2022
• https://doi.org/10.1002/pssa.202200485

2022: Sputtering epitaxy of transition metal nitrides and AlScN

• Authors: Christopher Lüttich, Florian Hörich, Ralf Borgmann, Jürgen Bläsing, Anja Dempewolf, Gordon Schmidt, Peter Veit, Jürgen Christen, André Strittmatter, Armin Dadgar
• Published: June 2022
• https://ieeexplore.ieee.org/document/9930417

---

GaNius Phase 2:

2025: A 2 kW GaN-Based 100 V Half-Bridge Power Module using an optimized PCB-Ceramic Stack-Up for High Efficiency and Power Density

• Authors: Manuel Rueß, Peter Mack, Jonas Pannasch, Mathias C. J. Weiser, Jeremy Nuzzo, Dominik Koch, Ingmar Kallfass
• Published: December 2025
• 10th IEEE Southern Power Electronics Conference (IEEE SPEC 2025), Johannesburg, South Afrika, 2025

2025: Modeling of the temperature-dependent On-State-Resistance of GaN-HEMTs considering self-heating during measurement

• Authors: A. Bäumler, M.-M. Bakran
• Published: August 2025
• Energy Conversion Congress & Expo Europe (ECCE Europe), Birmingham, UK

2025: Comparison of Compact Power Amplifier Designs for High Frequency Resonant Wireless Power Transfer Systems at 6.78 MHz using High-Q Resonators

• Authors: M. Rueß, K. Müller, M. C. J. Weiser and I. Kallfass
• Published: March 2025
• 2025 IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, GA, USA
• doi: 10.1109/APEC48143.2025.10977292

2024: Achieving Low Inductance Power Loops on Rigid-Flex Substrates for Efficient MHz Switching in GaN Half-Bridges

• Authors: M. Rueß, D. Koch, I. Kallfass
• Published: October 2024
• IEEE Energy Conversion Congress and Exposition (ECCE), Phoenix, AZ, USA
• doi: 10.1109/ECCE55643.2024.10861372

2024: Analysis of Inverter Operation Modes of an IGBT-Based ZCS LLC Converter for a 2 kW Automotive On-Board DC-DC

• Authors: D. Urbaneck, J. Wiegard, F. Schafmeister (in press)
• Published: June 2024
• https://www.vde-verlag.de/proceedings-de/566262304.html

2024: Pitfalls and their Avoidability in the Double-Pulse Test

• Authors: D. Urbaneck, J. Wiegard, F. Schafmeister (in press)
• Published: June 2024
• https://www.vde-verlag.de/proceedings-de/566262304.html

2024: GaN half-bridges on electrical and thermal co-designed ceramic substrates

• Authors: Manuel Rueß, Peter Mack, Dominik Koch, Aline Reck, Mathias C.J. Weiser, André Zimmermann, Ingmar Kallfass
• Published: April 2024
• Power Electronic Devices and Components (PEDC), Volume 11, 2025, 100091, ISSN 2772-3704
• doi: 10.1016/j.pedc.2025.100091