Funded Projects in GaNius I

Cluster

I – Materials, technology and devices

II – Device models and control (Power IC)

III – Bi-directional devices and topologies

Project name	Institution	Researcher	Cluster
Electronic transport of polarization-induced, two-dimensional electron gases with extremely high sheet carrier density for ScAlN/GaN-based power devices (ScNius)	Albert-Ludwigs-Universität Freiburg, Institut für Nachhaltige Technische Systeme – INATECH	Oliver Ambacher, Ali Yassine	I
Electronic transport of polarization-induced, two-dimensional electron gases with extremely high sheet carrier density for ScAlN/GaN-based power devices (ScNius)	TU Bergakademie Freiberg, Institut für Angewandte Physik	Johannes Heitmann, Peter Fischer, Alexander Schmid	I
Planar and Vertical Junctions for innovative GaN-Based High-Power Devices	Otto-von-Guericke-Universität Magdeburg, Institut für Physik (IfP)	Jürgen Christen, Holger Eisele, Gordon Schmidt, Konstantin Wein	I
Planar and Vertical Junctions for innovative GaN-Based High-Power Devices	RWTH Aachen, Lehr- und Forschungsgebiet Technologie der Verbindungshalbleiter	Andrei Vescan, Qi Shu	I
Transition metal-nitride-AlGaN layers for electronic applications by sputtering epitaxy	Otto-von-Guericke-Universität Magdeburg, Abt. Halbleiterepitaxie	Armin Dadgar, Christopher Lüttich	I
Transition metal-nitride-AlGaN layers for electronic applications by sputtering epitaxy	Otto-von-Guericke-Universität Magdeburg, Abt. Materialphysik	Martin Feneberg, Jona Grümbel	I
High Frequency Switching Power Converters based on AlN-based Power Transistors	TU Berlin, Chair of Power Electronics	Sibylle Dieckerhoff, Viktoria Schwarzott	II, III
High Frequency Switching Power Converters based on AlN-based Power Transistors	Ferdinand Braun Institut, GaN Power Electronic Devices Lab	Oliver Hilt, Houssam Halhoul	I, III
High Frequency Switching Power Converters based on AlN-based Power Transistors	Ferdinand Braun Institut, Transmitter & Receiver	Andreas Wentzel, Thomas Hoffmann	II
Modelling and characterization of GaN-HEMT devices with respect to effects of charge carrier trapping	KIT, Leistungselektronische Systeme	Marc Hiller, Philipp Swoboda	II
Modelling and characterization of GaN-HEMT devices with respect to effects of charge carrier trapping	KIT, Institut für Hochleistungsimpuls- und Mikrowellentechnik	Martin Sack, Ivan Vorotiahin	II
Conformal 3D Ceramic-Based Intelligent GaN Power Systems-in-Package (3D-CeraGaN)	Universität Stuttgart, Institut für Robuste Leistungs­halbleiter­systeme	Ingmar Kallfass, Manuel Rueß	II
Conformal 3D Ceramic-Based Intelligent GaN Power Systems-in-Package (3D-CeraGaN)	Universität Stuttgart, Institut für Mikrointegration	André Zimmermann, Peter Mack	I
Adaptive GaN gate driver with inductive feed-forward for highest efficiency (AGaNDrive)	Universität Duisburg-Essen, Elektronische Bauelemente und Schaltungen	Anton Grabmaier, Rainer Kokozinski, Markus Diekmann	II
Adaptive GaN gate driver with inductive feed-forward for highest efficiency (AGaNDrive)	TU Dortmund, Lehrstuhl Energiewandlung	Martin Pfost, Céline Lawniczak	II
Monolithically Integrated Bidirectional GaN-Based Switch enabling Self-Healing Multi-Winding DC/DC Converters	CAU Kiel, Chair of Power Electronics	Marco Liserre, Thiago Pereira	III
Monolithically Integrated Bidirectional GaN-Based Switch enabling Self-Healing Multi-Winding DC/DC Converters	RWTH Aachen, Lehr- und Forschungsgebiet Technologie der Verbindungshalbleiter	Andrei Vescan, Jasmin Ehrler	I, III
Modelling and Assessment of Threshold Voltage Instabilities in p-gate GaN HEMTs	TU Dortmund, Lehrstuhl Energiewandlung	Martin Pfost, Thorsten Oeder	II
Modelling and Assessment of Threshold Voltage Instabilities in p-gate GaN HEMTs	TU Berlin, Chair of Power Electronics	Sibylle Dieckerhoff	II
GaN-Enabled Three-Phase PFC-Rectifier Family in CCM-Boost Mode Employing Only Two HF-Switches and Inductors for Low Common Mode and Simplified Power Architectures	Universität Paderborn, Leistungselektronik und Elektrische Antriebstechnik	Frank Schafmeister, Saurav Das	III
Aluminum Nitride for vertical Power Electronics	TU Braunschweig, Institut für Halbleitertechnik	Andreas Waag, Klaas Strempel	I
Aluminum Nitride for vertical Power Electronics	Friedrich-Alexander-Universität, Lehrstuhl für Optoelektronik	Bernd Witzigmann, Samuel Faber	I

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Funded Projects in GaNius II

Cluster

I – Characterization and Long-Term Stability

II – Device Applications including Bidirectional Switches

III – Integration

Project name	Institution	Researchers	Cluster
Determining the Temperature of GaN based power semiconductors based on Temperature Sensitive Paramaters (TSEP)	Universität Bayreuth	Mark Bakran, Andreas Bäumler	I
ReToGaN – Investigations of Reliability, Parameter Stability and Topologies for GaN-Based Power Electronics	Technische Universität Chemnitz	Thomas Basler, Gengqi Li	I
ReToGaN – Investigations of Reliability, Parameter Stability and Topologies for GaN-Based Power Electronics	Universität Kassel	Jens Friebe, Yasser Yousefi Zandabad	I
Modelling and Characterization of GaN-HEMTs under Stress Conditions in Power Electronic Systems	Technische Universität Berlin	Sibylle Dieckerhoff	I
Modelling and Characterization of GaN-HEMTs under Stress Conditions in Power Electronic Systems	Technische Universität Dortmund	Martin Pfost	I
High Frequency Switching Power Converters based on AlN-based Power Transistors	Technische Universität Berlin	Sibylle Dieckerhoff, Jonas Schlindwein	II, III
High Frequency Switching Power Converters based on AlN-based Power Transistors	Ferdinand-Braun-Institut Berlin	Oliver Hilt	II, III
High Frequency Switching Power Converters based on AlN-based Power Transistors	Ferdinand-Braun-Institut Berlin	Andreas Wentzel	II, III
GaN-HEMT Driver utilizing Alternative Control and Feed-Forward Techniques (GaNdalf)	Universität Duisburg Essen	Anton Grabmaier	II, III
GaN-HEMT Driver utilizing Alternative Control and Feed-Forward Techniques (GaNdalf)	Technische Universität Dortmund	Martin Pfost	II, III
Characterization and Application of GaN-HEMTs at Cryogenic Temperatures	Karlsruher Institut für Technologie	Marc Hiller	I
Highly-Efficient, Isolated Multi-MHz GaN-based DC-DC Converters with Active Diode Rectification	Universität Stuttgart	Ingmar Kallfass, Manuel Rueß	II
Highly-Efficient, Isolated Multi-MHz GaN-based DC-DC Converters with Active Diode Rectification	Friedrich-Alexander-Universität Erlangen-Nürnberg	Martin März, Nikolai Weitz	II
Exploiting GaN Devices for Drive Inverters and Drive Inverters for GaN Devices (DriveForGaN)	Otto-von-Guericke-Universität Magdeburg	Andreas Lindemann, Tianyu Li	I, II, III
Exploiting GaN Devices for Drive Inverters and Drive Inverters for GaN Devices (DriveForGaN)	Technische Universität Braunschweig	Regine Mallwitz, Minjia Chen	I, II, III
Performance Evaluation of Soft-and Hard-Switched Inverters Based on Monolithically-Integrated Bidirectional GaN Devices	Christian-Albrechts-Universität zu Kiel	Marco Liserre, Reza Barzgarkho	III
Bidirectional-GaN-based Soft-switched Current Source Converters	Technische Universität München	Marcelo Lobo Heldwein, Christos Leontaris	III
Toward chip-scale Off-line Power supplies in GaN: Advancing monolithic GaN analog and mixed signal circuit design for high-efficiency and highly integrated power-factor correction (PFC) converters	Leibniz Universität Hannover	Bernhard Wicht, Niklas Deneke	II